inchange semiconductor isc product specification isc silicon npn power transistor BDY46 description collector-emitter breakdown voltage- : v (br)ceo = 300v(min.) dc current gain- : h fe =20(min.)@i c = 2a collector-emitter saturation voltage- : v ce(sat )= 1.5v(max)@ i c = 15a high switching speed applications voltage regulator inverter switching mode power supply absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 600 v v ces collector-emitter voltage 600 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 17 a i b b base current 5 a p c collector power dissipation@t c 45 95 w t j junction temperature 175 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.37 /w isc website www.iscsemi.cn 1 h t t p : / / w w w . b d t i c . c o m free datasheet http://
inchange semiconductor isc product specification isc silicon npn power transistor BDY46 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 200ma; i b = 0 300 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 600 v v (br)ebo emitter-base breakdown voltage i e = 2ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 15a; i b = 5a 1.5 v v be (sat) base-emitter saturation voltage i c = 15a; i b = 5a 2.0 v i cbo collector cutoff current v cb = 600v; i e = 0 v cb = 600v; i e = 0, t c =150 0.2 2.5 ma h fe-1 dc current gain i c = 2a; v ce = 2v 20 h fe-2 dc current gain i c = 10a; v ce = 2v 5 f t current gain-bandwidth product i c = 0.5a; v ce = 10v 10 mhz switching times t on turn-on time 0.5 s t f fall time 1.0 s t off turn-off time i c = 5a; i b1 = -i b2 = 1a 3.5 s isc website www.iscsemi.cn 2 h t t p : / / w w w . b d t i c . c o m free datasheet http://
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